Bachelor of Technology
Electronic and Communication Engineering
Electronic Devices – Second Semester
Electronics Devices – Unit 3 and 4 Bipolar Junction Transistor and Field Effect Transistors Notes
Unit-I
Evaluation Of Electronics: Introduction & Application Of Electronics, Energy Band Theory Of Crystals, Energy Band Structures In Metals, Semiconductors And Insulators, Theory Of Semiconductors: Classification Of Semiconductors, Conductivity Of Semiconductors, Carrier Concentration In Intrinsic & Extrinsic Semiconductors, Properties Of Intrinsic And Extrinsic Semiconductors, Variation In Semiconductors Parameters With Temperature, Fermi-Dirac Function, Fermi Level In A Semiconductor Having Impurities, Band Structure Of Open-Circuited P-N Junction, Drift And Diffusion Currents, Carrier Life Time, Continuity Equation
Unit – II
Theory of p-n junction Diode: Diode Current Equation, Diode Resistance, Transition Capacitance, Diffusion Capacitance, (Elementary treatment only), Effect of Temperature on p-n Junction Diode, Switching Characteristics, Piecewise Linear Model, Special Diodes: Zener Diode, Varactor Diode, Tunnel Diode, Photodiode, Light Emitting Diodes, Schottky Barrier Diode, Applications of Diodes: Half-Wave Diode Rectifier, Full-Wave Rectifier, Clippers and Clampers.
Unit – III
Bipolar junction transistor: Introduction of the transistor, construction, transistor operations, BJT characteristics, load line, operating point, leakage currents, saturation and cut-off mode of operations, Eber-moll‘s model.
Unit – IV
Application of BJT: CB, CE, CC configurations, hybrid model for transistor at low frequencies, Introduction to FETs and MOSFETs. Fundamentals of digital electronics: Digital and analog signals, number systems, Boolean algebra, logic gates with simple applications, logic gates, karnaugh maps.
